منابع مشابه
HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN 75 HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN
For the GaN material system, one reason for the breaking down of the efficiency is the socalled quantum confined Stark effect (QCSE). Since today’s LEDs are grown in the common [0001] (c-)direction, the internal polarization fields are perpendicular to the quantum wells. The cause of these internal fields are spontaneous and piezoelectric polarization. The reason for the latter is mechanical st...
متن کاملInfluence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explai...
متن کاملInvestigations of HVPE grown Nonpolar a-plane GaN on Slightly Misoriented r-plane Sapphire Substrates
We have investigated the growth of nonpolar GaN templates by hydride vapor phase epitaxy (HVPE). This includes a systematic study of misoriented r-plane sapphire wafers with a miscut angle up to ±1◦ towards the c-axis of the crystal as starting substrates. Starting with an AlN nucleation layer approximately 3.3μm of nonpolar a-plane GaN are grown by metalorganic vapor phase epitaxy (MOVPE). The...
متن کاملImprovement of MOVPE Grown (112̄2) Oriented GaN 25 Improvement of MOVPE Grown (112̄2) Oriented GaN on Pre-Structured Sapphire Substrates Using a SiNx Interlayer and HVPE Overgrowth
In this article two methods for improvements of (112̄2) oriented semipolar GaN grown by MOVPE on pre-structured sapphire substrates are investigated. The integration of a SiNx interlayer helps to obtain a better crystal quality. Also the overgrowth of the MOVPE samples by HVPE is a way to obtain a smoother GaN surface. A high incorporation of oxygen on (112̄2) oriented GaN compared to (0001) orie...
متن کاملEnhancing GaN Self Separation in HVPE by Use of Molybdenum
We prepared 2”-GaN wafers as templates for a self separation process which is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates process starts with GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are getting masked with 200nm of SiN that is structured by means of optical litho...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2007
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.03.030